=== BibTeX References ===

{{{#!bibtex

@article{collins_properties_1957,
	title = {Properties of {Gold-Doped} Silicon},
	volume = {105},
	url = {http://link.aps.org/doi/10.1103/PhysRev.105.1168},
	doi = {10.1103/PhysRev.105.1168},
	abstract = {Measurements of the temperature dependence of resistivity and Hall coefficient in gold-doped silicon show an acceptor level at 0.54 ev from the conduction band and a donor level at 0.35 ev from the valence band. These levels appear in equal concentrations within experimental error. The location of these levels is supported by photoconductivity measurements. A search was made for other levels associated with gold centers but none were found. The distribution coefficient for gold in silicon is 2.5{\texttimes}10-5. Gold was introduced into the crystals by growing from a gold-doped melt and by diffusion into single crystals at high temperatures. The concentrations of gold observed in solution after saturation at various temperatures is consistent with that expected from the distribution coefficient. Gold acts as a recombination center detectable at concentrations as low as 1012 per cm3. Because the acceptor level is so close to the center of the forbidden band, it is possible to shift the Fermi level below the middle with large ratios of gold to residual donors. The acceptor level is measured in p-type silicon as 0.62 ev from the valence band, giving a value of band gap consistent with previous measurements by other methods.},
	number = {4},
	journal = {Physical Review},
	author = {C. B. Collins and R. O. Carlson and C. J. Gallagher},
	month = feb,
	year = {1957},
	pages = {1168}
}

@article{hauser_boundary_1971,
	title = {Boundary conditions at p-n junctions},
	volume = {14},
	issn = {0038-1101},
	url = {http://www.sciencedirect.com/science/article/B6TY5-46VC24T-GJ/2/b4a3fc6edd6e94173d8e77742b06ea77},
	doi = {10.1016/0038-1101(71)90088-8},
	abstract = {{{\textless}p{\textgreater}{\textless}br/{\textgreater}A} discussion is presented of the relationships between carrier densities at a p-n junction and the junction potential. The major purpose of the work is to discuss the relationship between the Fletcher and Misawa boundary conditions. In addition, a discussion is presented of an extension of the normal boundary conditions to account for current flow within the junction space charge region.{\textless}/p{\textgreater}},
	number = {2},
	journal = {{Solid-State} Electronics},
	author = {{J.R.} Hauser},
	month = feb,
	year = {1971},
	pages = {133--139}
}

@article{hjalmarson_theory_1980,
	title = {Theory of Substitutional Deep Traps in Covalent Semiconductors},
	volume = {44},
	url = {http://link.aps.org/doi/10.1103/PhysRevLett.44.810},
	doi = {10.1103/PhysRevLett.44.810},
	abstract = {The energies of substitutional deep A1 impurity levels in zinc-blende semiconductors are predicted and related to the impurities' atomic energies and to host dangling bond (ideal vacancy) energies.},
	number = {12},
	journal = {Physical Review Letters},
	author = {H. P. Hjalmarson and P. Vogl and D. J. Wolford and J. D. Dow},
	month = mar,
	year = {1980},
	pages = {810}
}

@article{resende_calculations_1999,
	title = {Calculations of Electrical Levels of Deep Centers: Application to {Au-H} and {Ag-H} Defects in Silicon},
	volume = {82},
	shorttitle = {Calculations of Electrical Levels of Deep Centers},
	url = {http://link.aps.org/doi/10.1103/PhysRevLett.82.2111},
	doi = {10.1103/PhysRevLett.82.2111},
	abstract = {First-principles local-density formalism cluster theory is used to determine the structure of Au- and Ag-hydrogen complexes in Si. The theory, with an empirical correction, is then applied to extract their donor and acceptor levels and these are compared with capacitance transient spectroscopic measurements. Assignments of these levels to specific H defects are then made. Models for the defects responsible for the neutralization of the electrical activity of the Au and Ag centers are proposed.},
	number = {10},
	journal = {Physical Review Letters},
	author = {A. Resende and R. Jones and S. \"{O}berg and P. R. Briddon},
	month = mar,
	year = {1999},
	pages = {2111}
}

@article{silva_electronic_2011,
	title = {Electronic structure of Zn, Cu and Ni impurities in germanium},
	volume = {23},
	issn = {0953-8984},
	url = {http://iopscience.iop.org/0953-8984/23/6/065802},
	doi = {10.1088/0953-8984/23/6/065802},
	number = {6},
	journal = {Journal of Physics: Condensed Matter},
	author = {E L Silva and J Coutinho and A Carvalho and V J B Torres and M Barroso and R Jones and P R Briddon},
	month = feb,
	year = {2011},
	pages = {065802}
}

}}}

=== Others ===

  * <<ln(http://www.st-andrews.ac.uk/~www_pa/Scots_Guide/experiment/lab/expt5/page1.html,Simple Transistor Amplifier)>>